Pattern forming method capable of providing an excellent pattern

Details Pattern forming method capable of providing an excellent pattern Pattern forming method capable of providing an excellent pattern

1991-10-10

1993-06-08

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430192, 430311, 430313, 430326, 430330, G03C 516, G03C 172

Patent

active

052178510

ABSTRACT:
A pattern forming method providing a satisfactory pattern shape of high resolution power and high sensitivity. A pattern forming material comprising a resin containing hydroxyl groups is coated on a substrate and selectively exposed by Deep UV light using an optional mask. Then, the surface of the unexposed area is selectively silylated by hexamethyl disilazane and, thereafter dry-developed by reactive ion etching using O.sub.2 gas. With such a constitution, the exposed area and the unexposed area can be distinguished clearly to obtain a resist pattern of high resolution power. Further, since the Deep UV light has a property of being strongly absorbed to the resist film, the sensitivity is increased. Further, since the Deep UV light does not reach as far as the lower portion of the resist film, no undesirable notching phenomenon occurs even if there is any step on the substrate to be fabricated. Likewise, if any light reflective film such as an Al film is present on the substrate, the pattern shape is free from the effect of the film.

REFERENCES:
patent: 3859091 (1975-01-01), Wessells et al.
patent: 4552833 (1985-11-01), Ito et al.
patent: 4613398 (1986-09-01), Chiong et al.
patent: 4751170 (1988-06-01), Mimura et al.
patent: 4810601 (1989-03-01), Allen et al.
patent: 5023164 (1991-06-01), Brunsvold et al.
patent: 5123998 (1992-06-01), Kishimura
Kodak Publ, (G-47, Proc. Microelectronic Seminar. Interface '76, 1976), 116-22.
Article "Silylation Method--Feature and Evaluation of the Same--" Semicon News (Nov. 1988), pp. 84-91.
F. Coopmans and B. Roland "Desire: A Novel Dry Developed Resist System", SPIE vol. 631 Advances in Resist Technology and Processing III (1986), pp. 34-39.

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