Pattern-forming method and radiation resist for use when working

Details Pattern-forming method and radiation resist for use when working Pattern-forming method and radiation resist for use when working

1991-01-22

1993-03-09

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430270, 430942, G03C 500, G03F 7075

Patent

active

051926431

ABSTRACT:
Disclosed is a method of forming a pattern by irradiating a resist, which comprises irradiating a resist composed mainly of a polymer or copolymer comprising structural units represented by the following general formula (1): ##STR1## where R represents a hydrocarbon group containing at least one Si atom, patternwise with an energy beam, and developing the irradiated resist pattern.

REFERENCES:
patent: 4686168 (1987-08-01), Fujii
Patent Abstracts of Japan, vol. 12, No. 95 (P-681)(2942), Mar. 29, 1988 & JP-A-62 229141.
Patent Abstracts of Japan, vol. 9, No. 62 (P-342)(1785), Mar. 19, 1985 & JP-A-59 197036.
"Si-Containing Electron Resist Materials for Bilayer Processing Technology", Tada et al., Solid State Technology, Jun. 1989, pp. 91-95.

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