Pattern-forming method and lithographic system

Details Pattern-forming method and lithographic system Pattern-forming method and lithographic system

1998-02-26

1999-11-30

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430328, G03C 500

Patent

active

059940301

ABSTRACT:
A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

REFERENCES:
patent: 5789140 (1998-08-01), Chou et al.
F. Benistant et al., "A heavy ion implanted pocket 0.10 .mu.m n-type metal-oxide-semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process", J. Vac. Sci. Technol. B 14(6), pp.4051-4054, Nov./Dec. 1996.
R. Jonckheere et al., Electron beam / DUV intra-level mix-and-match lithography for random logic 0.25.mu.m CMOS, Microelectronic Engineering 27, pp. 231-234, 1995.

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