Pattern forming method and bilayer film

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S270100, C430S271100, C430S905000

Reexamination Certificate

active

10226321

ABSTRACT:
A pattern forming method comprising forming a coating of a radiation-sensitive resin composition, which contains an acid-dissociable group-containing polysiloxane, alkali-insoluble or scarcely alkali-soluble but becoming alkali-soluble when the acid-dissociable group dissociates, on a film containing a polymer with a carbon content of 80 wt % or more and a polystyrene-reduced weight average molecular weight of 500–100,000, an applying radiation to the coating is provided. The method can form minute patterns with a high aspect ratio by suitably selecting a specific etching gas in the dry etching process, without being affected by standing waves.

REFERENCES:
patent: 5401614 (1995-03-01), Dichiara et al.
patent: 5882844 (1999-03-01), Tsuchiya et al.
patent: 5972560 (1999-10-01), Kaneko et al.
patent: 6066433 (2000-05-01), Takemura et al.
patent: 6312481 (2001-11-01), Lin et al.
patent: 6531260 (2003-03-01), Iwasawa et al.
patent: 2004/0191672 (2004-09-01), Oguro et al.
patent: 2005/0145386 (2005-07-01), Nguyen et al.
patent: 1 142 928 (2001-10-01), None
patent: 7-172586 (1995-07-01), None
patent: 9-315335 (1997-12-01), None
patent: 11-310699 (1999-11-01), None
patent: 2000-143937 (2000-05-01), None
patent: 2001-40293 (2001-02-01), None
patent: 2001-109150 (2001-04-01), None
JPO English abstract for JP 2001-40293.
Derwent English abstract for JP 2000-143937.
Derwent English abstract for JP 2001-109150 (Uno et al).
Kunz, et al., “Outlook for 157-nm Resist Design”, Journal of Photopolymer Science and Technology, 12, 4, 561-570 (1999).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Pattern forming method and bilayer film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern forming method and bilayer film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern forming method and bilayer film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3768864

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.