Pattern forming method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430190, 430193, 430945, G03C 516

Patent

active

049101234

ABSTRACT:
Disclosed is a pattern forming method using pattern forming material which is reactive to a light of 249 nm or so such as DUV light or excimer laser light and applicable to manufacture of semiconductors. The material used in this method includes resin which includes a bonding unit of ##STR1## and has low absorption near 249 nm after light exposure, and is soluble in a solvent which dissolves the resin. By this method, a fine pattern of high contrast can be obtained.

REFERENCES:
patent: 4522911 (1985-06-01), Clecak et al.
patent: 4529682 (1985-07-01), Toukhy
patent: 4626491 (1986-12-01), Gray

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Pattern forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern forming method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-792325

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.