Pattern forming method

Details Pattern forming method Pattern forming method

2010-05-14

2011-11-29

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S322000, C430S330000

Reexamination Certificate

active

08067148

ABSTRACT:
A resist film of a positive type containing a photoacid generator is formed on a substrate. Then, pattern exposure is performed by selectively irradiating the resist film with exposure light. Thereafter, first heating is performed on the resist film subjected to the pattern exposure. After the heating, first development is performed on the resist film, thereby forming a first resist pattern. Subsequently, the first resist pattern is exposed to a solution containing a thermal acid generator and containing neither polymer nor a cross-linking agent. After the exposure, second heating is performed on the first resist pattern. Second development is then performed on the first resist pattern, thereby forming a second resist pattern made of the first resist pattern having a reduced size.

REFERENCES:
patent: 6180320 (2001-01-01), Saito et al.
patent: 2005/0069813 (2005-03-01), Sawada et al.
patent: 2000-035672 (2000-02-01), None
patent: 2002-006512 (2002-01-01), None
patent: 2002-299202 (2002-10-01), None
patent: 2005-107116 (2005-04-01), None
patent: 2007-017993 (2007-01-01), None

Affiliated with

Also associated with

Rating

Pattern forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern forming method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4310183