Pattern forming method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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Details

C430S329000, C430S330000, C430S322000

Reexamination Certificate

active

07851139

ABSTRACT:
A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.

REFERENCES:
patent: 6197473 (2001-03-01), Kihara et al.
patent: 7147985 (2006-12-01), Yueh et al.
patent: 2005/0130068 (2005-06-01), Kondoh et al.
patent: 2008/0044759 (2008-02-01), Ishibashi et al.
patent: 2008/0138746 (2008-06-01), Kondoh et al.
patent: 10-073927 (1998-03-01), None

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