Pattern forming method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430313, 430314, 430322, 430324, 430325, 430329, 430330, G03F 726

Patent

active

052622827

ABSTRACT:
A pattern forming method of a resist to be used in the manufacturing process of a semiconductor device. The desired area of a resist film is made hydrophilic by an exposure and a mask material is precipitated and deposited on the area of resist film made hydrophilic in the solution. The patterning of resist film is thus carried out, and a pattern of high reliability is formed. After exposure, by silylizing or baking the resist film, a pattern of higher reliability is formed. Furthermore, after patterning of the resist film, the precipitation and deposition of the mask material are carried out again, and a reversed pattern of high reliability is formed by eliminating the resist film made with patterning by the lift-off process.

REFERENCES:
patent: 4751170 (1988-06-01), Mimura et al.
patent: 4999280 (1991-03-01), Hiraoka
Coopmans et al., "DESIRE: A Novel Dry Developed Resist System", 1986 SPIE, vol. 631, Advances in Resist Tech. and Processing III, pp. 34-39.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Pattern forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern forming method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-21539

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.