Pattern forming material and pattern forming method

Details Pattern forming material and pattern forming method Pattern forming material and pattern forming method

1998-02-19

2000-01-25

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430325, 430322, 430313, 430314, 430330, G03F 700, G03F 726, G03F 736

Patent

active

060176830

ABSTRACT:
The pattern forming material of the present invention includes a polymer having a group which generates an acid when the polymer is irradiated with an energy beam or heated and a compound which generates a base when the compound is irradiated with an energy beam. The polymer is a binary polymer or a polymer of a higher degree obtained by polymerizing another group with a compound represented by the following general formula: ##STR1## where R.sub.1 indicates a hydrogen atom or an alkyl group, and R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group.

REFERENCES:
patent: 5278029 (1994-01-01), Shirai et al.
Endo, et al., "Positive Surface Modification Resist Process using Photobase Generator for 193 nm Lithography", Third International Symposium on 193nm lithography Digest of Abstracts, pp. 89, Jun. 29-Jul. 2, 1997.

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