Pattern formation method utilizing deep UV radiation and bisazid

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430167, 430194, 430197, 430311, 430927, G03C 516, G03F 726

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044697783

ABSTRACT:
Disclosed is a pattern formation method comprising exposing a photosensitive composition comprising a bisazide compound represented by the following general formula: ##STR1## wherein A stands for an atom or atomic group selected from O, S, CH.sub.2, CH.sub.2 CH.sub.2, SO.sub.2 and S.sub.2, X stands for an atom or atomic group selected from H and N.sub.3, and when X is H, Z is a group of N.sub.3 and when X is N.sub.3, Z is an atom of H or Cl, and a polymeric compound to deep UV rays, to form fine patterns.

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Iwayanagi et al., "Azide Photoresists for Deep U.V. Lithography", J. Electrochem. Soc., 12/1980, pp. 59-60.
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De Forest, W. S., "Photoresist", McGraw-Hill Book Co., 1975, pp. 103-109.
Tsunoda et al., Photo Sci. & Eng., vol. 17, No. 4, 1973, pp. 390-393.

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