Pattern formation method and exposure system

Details Pattern formation method and exposure system Pattern formation method and exposure system

2006-08-22

2006-08-22

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S395000

Reexamination Certificate

active

07094521

ABSTRACT:
After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

REFERENCES:
patent: 5900354 (1999-05-01), Batchelder
patent: 6083664 (2000-07-01), Inno et al.
patent: 2005/0037269 (2005-02-01), Levinson
patent: P2001-316863 (2001-11-01), None
M. Switkes and M. Rothschild, “Immersion lithography at 157 nm”, J. Vac. Sci. Technol., B19, 2353 (2001)).

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