Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Reexamination Certificate
2011-08-16
2011-08-16
Davis, Daborah Chacko (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
C430S394000, C430S322000
Reexamination Certificate
active
07998663
ABSTRACT:
After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma.
REFERENCES:
patent: 6140225 (2000-10-01), Usami et al.
patent: 6569595 (2003-05-01), Sato et al.
patent: 2006/0041047 (2006-02-01), Ramsey
patent: 2006/0078823 (2006-04-01), Kanda et al.
patent: 2007/0105054 (2007-05-01), Chiba et al.
patent: 2007/0141273 (2007-06-01), Nakano
patent: 2007/0148602 (2007-06-01), Lee et al.
patent: 2007/0161245 (2007-07-01), Rathsack et al.
patent: 2008/0032239 (2008-02-01), Endo et al.
patent: 2008/0138597 (2008-06-01), Asai
patent: 2008/0193882 (2008-08-01), Endo et al.
patent: 2008/0227038 (2008-09-01), Endo et al.
Maenhoudt, M., et al., “Double Patterning scheme for sub-0.25 kl single damascene structures at NA=0.75, λ=193nm”, Optical Microlithography XVIII Proceedings of SPIE, 2005, pp. 1508-1518, vol. 5754, Bellingham, WA USA.
Endo Masayuki
Sasago Masaru
Chacko Davis Daborah
McDermott Will & Emery LLP
Panasonic Corporation
LandOfFree
Pattern formation method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pattern formation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern formation method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2672588