Pattern formation method

Details Pattern formation method Pattern formation method

2006-11-14

2006-11-14

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S311000

Reexamination Certificate

active

07135273

ABSTRACT:
After forming a resist film of a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, a solution including a basic compound. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

REFERENCES:
patent: 2002/0163629 (2002-11-01), Switkes et al.
Hoffnagle et al., “Liquid Immersion Deep-ultraviolet Interferometric Lithography”, J. Vac. Sci. Technol. B 17(8), Nov./Dec. 1999, pp. 3306-3309.
M. Switkes et al., “Immersion Lithography at 157nm”, J. Vac. Sci. Technol. B 19(6), pp. 2353-2356, Nov./Dec. 2001.

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