Pattern formation method

Details Pattern formation method Pattern formation method

2006-11-07

2006-11-07

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S311000

Reexamination Certificate

active

07132224

ABSTRACT:
After forming a resist film of a chemically amplified resist material including a base polymer, an acid generator for generating an acid through irradiation with light and lactone, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

REFERENCES:
patent: 6962766 (2005-11-01), Uenishi et al.
patent: P2001-316863 (2001-11-01), None
M. Switkes et al., “Immersion lithography at 157 nm”, J. Vac. Sci. Technolo., B19, 2353 (2001).

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