Pattern formation method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S330000

Reexamination Certificate

active

07022466

ABSTRACT:
Pattern exposure is performed by selectively irradiating a resist film with extreme UV of a wavelength of a 1 nm through 30 nm band at exposure energy of 5 mJ/cm2or less. After the pattern exposure, the resist film is developed so as to form a resist pattern.

REFERENCES:
patent: 6716730 (2004-04-01), Endo et al.
patent: 5-136026 (1993-06-01), None
patent: 2001-244196 (2001-09-01), None

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