Pattern formation method

Details Pattern formation method Pattern formation method

2005-07-05

2005-07-05

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S270100, C430S296000

Reexamination Certificate

active

06913873

ABSTRACT:
A resist film is formed from a chemically amplified resist material including a phenol polymer, an acrylic polymer and an onium salt serving as an acid generator. The resist film is selectively irradiated for pattern exposure with extreme UV of a wavelength of a 1 nm through 30 nm band or an electron beam, and is developed after the pattern exposure, so as to form a resist pattern.

REFERENCES:
patent: 5558976 (1996-09-01), Urano et al.
patent: 6033826 (2000-03-01), Urano et al.
patent: 6358665 (2002-03-01), Pawlowski et al.
patent: 2002-169291 (2002-06-01), None
“High Performance EB Chemically Amplified Resist Using Alicyclic Protetive Groups”; Jun-Ichi Kon et al.; SPIE, v3999(2000);p. 1207-1214.

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