Pattern formation method

Details Pattern formation method Pattern formation method

2005-09-27

2005-09-27

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S270100, C430S296000, C430S330000

Reexamination Certificate

active

06949329

ABSTRACT:
A resist film with a thickness of 250 nm or less is formed on a semiconductor substrate from a positive chemically amplified resist material including a base polymer whose solubility in an alkaline developer is changed by a function of an acid and an acid generator that has at least one electron attractive group introduced into a meta-position of an aromatic ring included in a counter action and generates an acid through irradiation with electron beams. The resist film is subjected to pattern exposure by irradiating with electron beams or extreme UV of a wavelength of a 1 nm through 30 nm band. The resist film is developed after the pattern exposure, thereby forming a resist pattern.

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