Pattern formation method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430325, 430326, 430330, 4302701, 430942, G03C 500

Patent

active

057925909

ABSTRACT:
A pattern formation method of an EB resist film having the chemical amplification property, which enables to form a desirable pattern without using an additional film and without decreasing the resolution. After an EB resist film with the chemical amplification property is formed on or over a supporting member, the resist film is contacted with an acid gas to absorb the gas on the surface area thereof. The absorbed acid gas exhibits a catalyst action to compensate the lost catalyst action of the exposure-generated acid, preventing the dissolution rate of the resist film from decreasing in a developer solution. The gas absorption process may be carried out before and/or after an EB exposure process of the resist film, and may be carried out simultaneously with the EB exposure process. As the acid gas to be absorbed, HCl, HBr, H.sub.2 O.sub.2 or H.sub.2 SO.sub.4 is preferably used.

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