Pattern form of an active region of a MOS type semiconductor dev

Details Pattern form of an active region of a MOS type semiconductor dev Pattern form of an active region of a MOS type semiconductor dev

1996-03-20

1998-06-02

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257202, 257204, 257390, H01L 2976, H01L 2710

Patent

active

057604541

ABSTRACT:
An object of the present invention is to micronize (i.e., reduce the size of) a MOS semiconductor device without reducing the operating speed of the device. An active region for the formation of a transistor has edges defined as the boundaries between the active region and a device separation region. The distance from one edge of the active region, which extends in the direction parallel to a gate width of the transistor, to the other edge decreases as the distance from a gate electrode along the direction of a gate length, which intersects the direction of the gate width increases. Thus, the size of the MOS semiconductor device can be decreased without impairing its speedup.

REFERENCES:
patent: 5444275 (1995-08-01), Kugishima et al.
patent: 5468982 (1995-11-01), Hshieh et al.
patent: 5539246 (1996-07-01), Kapoor

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