Passivation technology combining improved adhesion in passivatio

Details Passivation technology combining improved adhesion in passivatio Passivation technology combining improved adhesion in passivatio

1997-12-31

2000-04-04

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438786, 438958, H01L 21318, H01L 2170

Patent

active

060461012

ABSTRACT:
An integrated circuit passivation layer including a first passivation layer portion of silicon nitride treated with nitrous oxide and a second passivation layer portion of polyimide. Also, a method of passivating an integrated circuit wafer including depositing a first passivation layer over the top surface of an integrated circuit wafer having a scribe street area between adjacent integrated circuit device portions, depositing a second passivation layer over the first passivation layer, and patterning the first passivation layer and the second passivation layer to expose the scribe street area.

REFERENCES:
patent: 4543271 (1985-09-01), Peters
patent: 5132252 (1992-07-01), Shiraiawa et al.
patent: 5521125 (1996-05-01), Ormond et al.
patent: 5593925 (1997-01-01), Yamaha
patent: 5627403 (1997-05-01), Bacchetta et al.
patent: 5646439 (1997-07-01), Kitayama et al.
patent: 5698456 (1997-12-01), Bryant et al.
patent: 5795815 (1998-08-01), Vokoun et al.
patent: 5795821 (1998-08-01), Bacchetta et al.
patent: 5795833 (1998-08-01), Yu et al.
patent: 5825078 (1998-10-01), Michael

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