Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2011-03-08
2011-03-08
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S703000, C438S761000, C438S778000, C257S635000, C257S632000, C257S638000, C257S640000, C257SE21540
Reexamination Certificate
active
07902083
ABSTRACT:
According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electrical component with a first protective dielectric layer. The first protective dielectric layer is made of a generally moisture insoluble material having a moisture permeability less than 0.01 gram/meter2/day, a moisture absorption less than 0.04 percent, a dielectric constant less than 10, a dielectric loss less than 0.005, a breakdown voltage strength greater than 8 million volts/centimeter, a sheet resistivity greater than 1015ohm-centimeter, and a defect density less than 0.5/centimeter2.
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Alavi Kamal Tabatabaie
Bedinger John M.
Hallock Robert B.
Kazior Thomas E.
Moore Michael A.
Baker & Botts L.L.P.
Raytheon Company
Thai Luan C
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