Passivation film and method of forming the same

Details Passivation film and method of forming the same Passivation film and method of forming the same

2011-03-29

2011-03-29

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

By application of corpuscular or electromagnetic radiation

C313S587000, C257SE21028

Reexamination Certificate

active

07915153

ABSTRACT:
A passivation film and a method of forming the same are provided, the passivation film being used in a plasma display panel etc. In the passivation film, a first MgO layer, an intervening layer, and a second MgO layer are laminated and a laser is then irradiated to oxidize the intervening layer. Simultaneously, defects are formed at the interfaces of the first and second MgO layers. Accordingly, a plasma discharge firing voltage greatly decreases, and the total power consumption of the plasma display panel is significantly reduced.

REFERENCES:
patent: 2007/0103250 (2007-05-01), Harris
patent: 1996-077933 (2006-03-01), None
patent: 10-2002-0065752 (2002-08-01), None
patent: 10-2005-0029255 (2005-03-01), None

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