Passivating, stripping and corrosion inhibition of semiconductor

Details Passivating, stripping and corrosion inhibition of semiconductor Passivating, stripping and corrosion inhibition of semiconductor

1994-06-29

1996-08-13

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566561, 15665911, 216 77, H01L 2100

Patent

active

055452892

ABSTRACT:
A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is placed into a vacuum chamber (52), and passivated in a multicycle passivation process comprising at least two passivating steps. In each passivating step, passivating gas is introduced into the vacuum chamber (52) and a plasma is generated from the passivating gas. When the substrate also has remnant resist (26) thereon, the resist (26) is stripped in a multicycle passivation and stripping process, each cycle including a passivating step and a stripping step. The stripping step is performed by introducing a stripping gas into the vacuum chamber (52) and generating a plasma from the stripping gas. In the multicycle process, the passivating and optional stripping steps, are repeated at least once in the same order that the steps were done. Alternatively, the substrate (20) can also be passivated in a single cycle process using a passivating gas comprising water vapor, oxygen, and nitrogen. Optionally, corrosion of the substrate is further inhibited by introducing an amine vapor into the vacuum chamber (52) so that amine adsorps onto the substrate (20), forming a corrosion inhibition amine layer on the surface of the substrate (20).

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