Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2006-09-08
2009-10-27
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S574000, C438S579000, C257SE21205
Reexamination Certificate
active
07608497
ABSTRACT:
A method for fabricating a tiered structure includes forming a gate on a semiconductor substrate. Formation of the gate includes depositing a gate foot using a gate foot mask having an opening through it to define the gate foot over the substrate. After forming the gate foot, the gate foot mask is stripped and a passivation layer is formed over the gate foot and the substrate. A gate head mask is formed over the gate foot with the gate head mask exposing a portion of the passivation layer on a top portion of the gate foot. The portion of the passivation layer on the top portion of the gate foot is removed to expose the top portion of the gate foot. A gate head is formed on the top portion of the gate foot using the gate head mask. A lift-off process is performed, removing the gate head mask.
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Antcliffe Michael
Hodgson Lorna
Hu Ming
Milosavljevic Ivan
Schmitz Adele
Balzan, Esq. Christopher R.
Pham Thanhha
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