Passivated copper conductive layers for microelectronic applicat

Metal treatment – Process of modifying or maintaining internal physical... – Producing or treating layered – bonded – welded – or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 96, 148277, 148285, C22F 3806, C22F 3816

Patent

active

057663793

ABSTRACT:
A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.

REFERENCES:
patent: 3663279 (1972-05-01), Lepselter
patent: 3702427 (1972-11-01), Learn et al.
patent: 4108736 (1978-08-01), Rigo et al.
patent: 5230965 (1993-07-01), Cole et al.
Li et al.; "Copper Deposition and Thermal Stability Issues in Copper-Based Metallization for ULSI Technology"; 20 Aug. 1992.
Ding et al.; "Effects of the Addition of Small Amounts of Al to Copper: Corrosion, Resistivity, Adhesion, Morphology, and Diffusion"; J. Appl. Phys. 75 (7), 1 Apr. 1994, pp. 3627-3631.
Itow et al.; "Self-Aligned Passivation on Copper Interconnection Durability Against Oxidizing Ambient Annealing"; Applied Physics Letters, vol. 63, Issue 7, 16 Aug. 1993, pp. 934-936.
Li et al.; "Oxidation and Protection in Copper and Copper Alloy Thin Films"; J. Appl. Phys. 70 (5), 1 Sep. 1991, pp. 2820-2827.
Li et al.; "Refractory Metal Nitride Enacapsulation for Copper Wiring;" MRS Bulletin; Jun. 1993; pp. 52-56.
Ding et al.; "Oxidation Resistant High Conductivity Copper Films"; Appl. Phys. Lett. 64 (21), 23 May 1994, pp. 2897-2899.
Ding et al.; "Thermal Annealing of Buried Al Barrier Layers to Passivate the Surface of Copper Films"; Appl. Phys. Lett 65 (14), 3 Oct. 1994, pp. 1778-1780.
Clyne et al.; "Proceedings of The 2nd European Conference on Advanced Materials and Processes"; University of Cambridge UK; Jul. 22-24, 1991; vol. 1, Advanced Processing, pp. 362-364.
Newberg et al.; "Thermal Conductivity and Microstructure Stability of Heat Treated Amzirc Copper-Based Alloys"; Microstructural Science; vol. 16; pp. 231-243, (no date).
Shumay, Jr.,; "Copper's Expanding Role in Microelectronics"; Advanced Materials & Processes Inc. Metal Progress; Dec. 1987; pp. 54-60.
Arcot et al.; "Intermetallic Reactions Between Copper and Magnesium As An Adhesion/Barrier Layer"; Mat. Res. Soc. Symp. Proc.; vol. 225; pp. 231-236, (no month, 1991).
Ding et al.; "Ion Implantation To Inhibit Corrosion Of Copper"; Mat. Res. Soc. Symp. Proc.; vol. 265 (no month 1992); pp. 199-204.
Ding et al.; "Observation of Reduced Oxidation Rates for Plasma-Assisted CVD Copper Films"; Mat. Res. Soc. Symp. Proc.; vol. 309 (no month 1993); pp. 455-460.
Ding et al.; "Annealing of Boron-Implanted Corrosion Resistant Copper Films"; J. Appl. Phys. 74 (2); 15 Jul. 1993; pp. 1331-1334.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Passivated copper conductive layers for microelectronic applicat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Passivated copper conductive layers for microelectronic applicat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Passivated copper conductive layers for microelectronic applicat will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1720555

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.