Particulate contamination prevention using low power plasma

Details Particulate contamination prevention using low power plasma Particulate contamination prevention using low power plasma

1991-07-17

1992-04-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 156646, 156345, 20429806, 20429834, 427 38, 118 501, 118620, 118728, B44C 122, B05D 306, C23C 1400, B08B 312

Patent

active

051024969

ABSTRACT:
A method of preventing particulates from depositing onto a wafer during all periods that processing is not taking place including during all periods of wafer transfer into or out of a plasma reactor chamber. During all periods in which a wafer is within the reactor chamber, but is not being processed, a nonreactive auxiliary plasma is produced in the reactor chamber. This plasma charges the particulates and produces just above the surface of the wafer an electric field that repels the particulates from the wafer.

REFERENCES:
patent: 4392938 (1983-07-01), Harra et al.
patent: 4718975 (1988-01-01), Bowling et al.
patent: 4818359 (1989-04-01), Jones et al.
J. W. Coburn et al., "Positive-ion Bombardment of Substrates in rf Diode Glow Discharge Sputtering"; J. Appl. Phys., vol. 43, No. 12, Dec. 1972, p. 4965.
K. Koehler et al.; "Plasma Potentials of 13.56-MHz rf Argon Glow Discharges in a Planar System"; J. Appl. Phys. 57 (1); Jan. 1, 1985, p. 59.
G. S. Selwyn et al.; "In Situ Laser Diagnostic Studies of Plasma-Generated Particulate Contamination"; J. Vac. Sci. Technol. A (4), Jul./Aug. 1989, p. 2758.

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