Particle trap in a magnetron sputtering chamber

Details Particle trap in a magnetron sputtering chamber Particle trap in a magnetron sputtering chamber

1997-11-16

2000-01-11

Gupta, Yogendra

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429816, 2042982, 20429819, 20429806, 20429807, 20429814, 20429822, 20429811, C23C 1400, C23C 1434

Patent

active

060131594

ABSTRACT:
A plasma sputtering reactor in which a magnet is linearly scanned over the back of the sputtering target to enhance the sputtering. The magnet's linear scan is extended to beyond the wafer processing area. When the magnet reaches that point, conditions are changed within the reactor to cause particles otherwise trapped by the magnet to fall into an area of the reactor where they do not fall on the substrate being processed. The changed conditions may include extinguishing the plasma, reducing or reversing the target voltage, positively charging walls of the trap area, or pulsing gas through the plasma. Also, according to the invention, the plasma is ignited with the magnet positioned over the trap area so that particles generated in the ignition process are not immediately deposited on the wafer or the walls of the processing area, and they tend to stay in the trap area.

REFERENCES:
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patent: 5049251 (1991-09-01), Inoue
patent: 5221425 (1993-06-01), Blanchard
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patent: 5328585 (1994-07-01), Stevenson
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patent: 5518593 (1996-05-01), Hosokawa
Praburam, Observation of particle layers levitated in a radio-frequency sputtering plasma, Journal of Vacuum Science & Technology A, vol. 12, 1994, pp. 3137-3145.

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