Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Reexamination Certificate
2003-05-12
2004-11-02
Thornton, Yvette C. (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
C430S323000, C430S914000, C430S350000, C430S910000, C526S281000, C526S279000, C526S320000, C526S219600, C526S232100, C556S431000, C560S120000
Reexamination Certificate
active
06811960
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to photoresist monomers suitable for a bilayer photoresist, polymers derived therefrom and photoresist compositions comprising such polymers. In particular, the present invention relates to photoresist monomers comprising a silicon moiety.
2. Description of the Background Art
Some semiconductor manufacturing processes use photoresist copolymers derived from a monomer comprising an alicyclic compound to form ultrafine patterns. However, the yield of photoresist polymers from these compounds is relatively low resulting in increased manufacturing costs. While the yield of acrylates polymerization is high, the resulting photoresist polymers have a weak etching resistance, thereby limiting its use.
Forming an ultrafine pattern below 0.13 m using a conventional photoresist coating thickness results in a high aspect ratio which may cause the pattern to collapse. And if the coating thickness is reduced, the resulting photoresist coating often has low or no etching resistance. Thus, it is difficult to perform following, or successive processes after etching process using conventional photoresist polymers.
One method for overcoming the above described limitations is to use a “thin resist-hard mask” process, which generally involves reducing a coating thickness of the photoresist composition and introducing a hard mask below the photoresist film coating. Another method is to use a bilayer photoresist comprising silicon, which involves coating a bottom anti-reflective coating material (BARC), g-line photoresist or i-line photoresist on the substrate and then coating a silicon comprising photoresist thereon. The resulting photoresist film is exposed, and the upper layer (i.e., photoresist comprising silicon) is wet developed to form an upper layer photoresist pattern. The lower layer is dry developed using O2 plasma and the upper photoresist pattern as a mask to form a lower layer resist pattern. This process reduces or eliminates the occurrence of photoresist pattern collapse.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a photoresist monomers comprising silicon, photoresist polymers for bilayer resist derived from the same, and a process for preparing such photoresist polymers.
Another object of the present invention is to provide photoresist compositions comprising such photoresist polymers.
Still another object of the present invention is to provide a semiconductor device produced by using such a photoresist composition.
REFERENCES:
patent: 6569599 (2003-05-01), Lee et al.
patent: 6589707 (2003-07-01), Lee et al.
patent: 2001/0031420 (2001-10-01), Lee et al.
patent: 2002/0028406 (2002-03-01), Lee et al.
patent: WO 8601219 (1986-02-01), None
Baik Ki Ho
Jung Jae Chang
Jung Min Ho
Lee Geun Su
Hyundai Electronics Industries Co,. Ltd.
Thornton Yvette C.
Townsend and Townsend / and Crew LLP
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