Partial vacuum boron diffusion process

Details Partial vacuum boron diffusion process Partial vacuum boron diffusion process

1980-12-15

1983-04-26

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156614, C30B 2502

Patent

active

043812139

ABSTRACT:
A method is presented for the uniform and reproducible boron doping of many closely spaced silicon wafers in a single batch, wherein a particular process sequence and specified ranges of reactant gas compositions, flow rate and pressure are utilized. The method is illustrated for BCl.sub.3 as a boron source gas and H.sub.2 and O.sub.2 as an oxidant gas. Superior results are obtained when BCl.sub.3 and H.sub.2 O are present in the reaction chamber at pressures less than 10 Torr (1.3 kPa) and molar ratios are in a specific range close to but not equal to that necessary for stoichiometric production of B.sub.2 O.sub.3.

REFERENCES:
patent: 2873222 (1959-02-01), Derick et al.
patent: 3200019 (1965-08-01), Scott, Jr. et al.
patent: 3874920 (1975-01-01), Chappelow et al.
patent: 4263336 (1981-04-01), Thompson et al.
Busen et al., "Ellipsomeric Investigations", published in J. of Electrochem. Soc.: Solid State Science, Mar. 1968, pp. 291-294.
Wakefield et al., "Chemical Vapour Deposition", 4th International Conf. published by Electrochem. Soc., 1973, Lib. of Congress #73-86873.
Runyan, "Silicon Semiconductor Technology", McGraw-Hill Book Co., 1965, pp. 146-148.
Negrini et al., "Boron Predeposition in Silicon", published in J. of Electrochem. Soc.: Solid-State Science and Tech., Apr. 1978, pp. 609-613.

Affiliated with

Also associated with

Rating

Partial vacuum boron diffusion process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Partial vacuum boron diffusion process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Partial vacuum boron diffusion process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1563736