Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-12
2006-12-12
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S687000
Reexamination Certificate
active
07148140
ABSTRACT:
A method of fabricating a semiconductor device is provided. An interlayer dielectric layer is formed on one or more semiconductor layers (402). One or more feature regions are formed in the interlayer dielectric layer (404). A first conductive layer is formed in at least a portion of the feature regions and on the interlayer dielectric layer (406)). A first anneal is performed that promotes grain growth of the first conductive layer (408). An additional conductive layer is formed on the first conductive layer (410) and an additional anneal is performed (412) that promotes grain growth of the additional conductive layer and further promotes grain size growth of the first conductive layer. Additional conductive layers can be formed and annealed until a sufficient overburden amount has been obtained. Subsequently, a planarization process is performed that removes excess conductive material and thereby forms and isolates conductive features in the semiconductor device (414).
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Grunow Stephan
Leavy Montray
Papa Rao Satyavolu S.
Russell Noel M.
McLarty Peter K.
Picardat Kevin M.
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