Partial ion implantation apparatus and method using bundled...

Details Partial ion implantation apparatus and method using bundled... Partial ion implantation apparatus and method using bundled...

2006-06-01

2009-06-30

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S3960ML, C250S42300F, C250S398000, C315S505000, C315S005410, C313S359100

Reexamination Certificate

active

07554106

ABSTRACT:
An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.

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