Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1996-10-24
2000-04-25
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118723I, H05H 100
Patent
active
060540133
ABSTRACT:
There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4261762 (1981-04-01), King
patent: 4350578 (1982-09-01), Frieser et al.
patent: 4427516 (1984-01-01), Levinstein et al.
patent: 4427762 (1984-01-01), Takahashi et al.
patent: 4430547 (1984-02-01), Yoneda et al.
patent: 4457359 (1984-07-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4786359 (1988-11-01), Stark et al.
patent: 4793897 (1988-12-01), Dunfieled et al.
patent: 4807016 (1989-02-01), Douglas
patent: 4810935 (1989-03-01), Boswell
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4870245 (1989-09-01), Price et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5006220 (1991-04-01), Hijikata et al.
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5085727 (1992-02-01), Steger
patent: 5169487 (1992-12-01), Langley et al.
patent: 5187454 (1993-02-01), Collins et al.
patent: 5203956 (1993-04-01), Hansen
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5249251 (1993-09-01), Egalon et al.
patent: 5258824 (1993-11-01), Carlson et al.
patent: 5276693 (1994-01-01), Long et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5326404 (1994-07-01), Sato
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5349313 (1994-09-01), Collins et al.
patent: 5392018 (1995-02-01), Collins et al.
patent: 5399237 (1995-03-01), Keswick et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5414246 (1995-05-01), Shapona
patent: 5423945 (1995-06-01), Marks et al.
patent: 5477985 (1995-12-01), Rice et al.
patent: 5514246 (1996-05-01), Blalock
patent: 5529657 (1996-06-01), Ishii
patent: 5556501 (1996-09-01), Collins et al.
patent: 5777289 (1998-07-01), Hanawa et al.
Patent Abstracts of Japan, Publication No. 06196446 A, Jul. 15, 1994 (NEC Corp).
Patent Abstracts of Japan, Publication No. 07288196 A, Oct. 31, 1995 (Tokyo Electron LTD).
Patent Abstracts of Japan, Publication No. 0801779 A, Jan. 19, 1996 (Plasma Syst: KK).
Patent Abstracts of Japan, Publication No. 62052714 A, Mar. 7, 1987 (Olympus Optical Co Ltd; Toagosei Chem Ind Ltd).
Patent Abstracts of Japan, Publication No. 57045927 A, Mar. 16, 1982 (Fujitsu Ltd).
Coburn W.J. "Increasing the Etch Rate Ratio oSiO.sub.2 /Si in Fluorocarbon Plasma Etching", IBM Technical Disclosure, vol. 19, No. 10, Mar. 1977.
Matsuo, Seitaro. "Selective etching of SiO.sub.2 relative to Si by plasma reactive sputter etching", J. Vac. Sc. Technology, vol. 17, No. 2, Mar.-Apr. 1980.
European Patent Office Communication pursuant to Article 96(2) and Rule 51(2) EPC for Application No. 94307307.2-2208, mailed Jan. 17, 1996.
Askarinam Eric
Buchberger Douglas
Collins Kenneth
Groechel David
Hung Raymond
Applied Materials Inc.
Dang Thi
LandOfFree
Parallel plate electrode plasma reactor having an inductive ante does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Parallel plate electrode plasma reactor having an inductive ante, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Parallel plate electrode plasma reactor having an inductive ante will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-990609