Palladium bonding wire for semiconductor device

Details Palladium bonding wire for semiconductor device Palladium bonding wire for semiconductor device

1995-05-30

1996-07-23

Simmons, David A.

Alloys or metallic compositions

Palladium base

420464, 420465, 437209, C22C 504

Patent

active

055386857

ABSTRACT:
A bonding wire for a semiconductor device contains high purity Pd or Pd alloy as a base metal and 25-10000 atppm of low boiling element III having a boiling point lower than a melting point of the base metal and soluble in Pd, or contains high purity Pd or Pd alloy as a base metal and 5-500 atppm of low boiling point element IV having a boiling point lower than a melting point of the base metal and insoluble in Pd, or high purity Pd or Pd alloy as a base metal, and 5-10000 atppm of low boiling point element III and low boiling point element IV, the low boiling point element III having a boiling point lower than a melting point of the base metal and being soluble in Pd, the low boiling point element IV having a boiling point lower than a melting point of the base metal and being insoluble in Pd, the low boiling elements III and IV being present in a concentration so that (content of the low boiling point element III)/25 + (content of the low boiling element IV)/5.gtoreq.1.gtoreq. (content of the low boiling element III)/10000 + (content of the low boiling element IV)/500. The low boiling point elements III and IV may be replaced by low boiling point element I soluble in Au and low boiling point element II soluble in Au, respectively.

REFERENCES:
patent: 4836984 (1989-06-01), Wagner et al.
patent: 4917861 (1990-04-01), Schaffer et al.
patent: 5402305 (1995-03-01), Asada et al.
"Gold Wire for Automated Bonding," Bruce L. Gehman, Electronics Materials Division, Cominco American Incorporated, Spokane, Washington. Mar. 1980, pp. 84-91.
Binary Alloy Phase Diagrams; vol. 1 ed by Thaddeus Massalshi p. 632, 1986.

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