Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-08-29
2006-08-29
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S185170, C365S185220, C365S189050
Reexamination Certificate
active
07099213
ABSTRACT:
The disclosed is a page buffer of a flash memory device. In accordance with the present invention, a latch is controlled through a program verification signal, a latch signal, and latch data in a page buffer during a program verification. As a result, there are many advantages. First, in the event that the program verification is performed after programming once more, a passed cell is not sensed again and maintains its value. Second, it is possible to prevent a problem caused by a sensing operation as well as a verification error due to an external factor. As a result, program operation errors can be prevented.
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Graham Kretelia
Hynix / Semiconductor Inc.
Mayer, Brown, Rowe and Maw LLP
Zarabian Amir
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