Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2011-01-21
2011-12-27
Lappas, Jason (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S230080
Reexamination Certificate
active
08085602
ABSTRACT:
A page buffer circuit comprises a bit line selection unit, a latch unit, and a bit line control unit. The bit line selection unit is configured to select a bit line coupled to memory cells. The latch unit comprises a plurality of latch circuits. The plurality of latch circuits is coupled to a sense node and configured to latch data to be programmed into the memory cells or store data from the memory cells. The bit line control unit is coupled to the sense node and configured to temporarily charge a voltage of the selected bit line in response to charge and transfer control signals or transfer the charged voltage to the selected bit line.
REFERENCES:
patent: 7298648 (2007-11-01), Lee et al.
patent: 100244864 (2000-03-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Aug. 30, 2011.
Koo Cheul Hee
Won Sam Kyu
Yang Chang Won
Hynix / Semiconductor Inc.
IP & T Group LLP
Lappas Jason
LandOfFree
Page buffer circuit, nonvolatile memory device including the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Page buffer circuit, nonvolatile memory device including the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Page buffer circuit, nonvolatile memory device including the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4315090