Pad structure to prompt excellent bondability for low-k...

Details Pad structure to prompt excellent bondability for low-k... Pad structure to prompt excellent bondability for low-k...

2005-10-18

2005-10-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000

Reexamination Certificate

active

06955981

ABSTRACT:
A method of fabricating a bonding pad anchoring structure comprising the following steps. Providing a substrate. Forming a series of grated metal layers over the substrate separated by an interleaving series of via plug layers having via plugs electrically connecting respective at least a portion of adjacent grated metal layers. The series of grated metal layers having an uppermost grated metal layer. Forming an uppermost via plug layer over the uppermost grated metal layer. The uppermost via plug layer having via plugs. Forming a bonding pad layer over the uppermost via plug layer so that the uppermost via plugs within the uppermost via plug layer electrically connect the bonding pad layer to at least a portion of the uppermost grated metal layer whereby the bonding pad layer is securely bonded to the substrate.

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