Pad structure for copper interconnection and its formation

Details Pad structure for copper interconnection and its formation Pad structure for copper interconnection and its formation

1998-08-11

2000-09-12

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438687, 438688, 438656, H01L 2144

Patent

active

061177695

ABSTRACT:
A semiconductor device with high conductivity interconnection lines formed of high conductivity material, such as copper, is manufactured using tantalum nitride material as barrier material between an aluminum layer, such as the wire bonding layer, and the underlying high conductivity interconnection lines. The tantalum nitride material contains high nitrogen content.

REFERENCES:
patent: 5714418 (1998-02-01), Bai et al.
Kyung-Hoon Min, et al. "Comparative study of tantalum and tantalum nitrides . . . ", J. Vac. Sci. Technol. B 14(5) pp. 3263-3269, Sep. 1996.
Bhola Mehrotra et al. "Properties of direct current magnetron reactively sputtered TaN" J. Vac. Sce, Technol. B 5(6) pp. 1736-1740, Nov. 1987.

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