Pad oxide protect sealed interface isolation

Details Pad oxide protect sealed interface isolation Pad oxide protect sealed interface isolation

1992-03-31

1993-10-26

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257506, 257513, 257760, 437 64, 437 69, 437 72, 437 73, H01L 2712, H01L 2348, H01L 2940

Patent

active

052568954

ABSTRACT:
Field oxide regions are formed between drive regions of a silicon substrate by forming over the substrate a sandwich of silicon dioxide, silicon nitride and silicon dioxide layers, opening the layers to expose a portion of the silicon substrate, removing a layer of the exposed substrate, forming side wall spacers on the edges of the opening, removing a layer of the silicon substrate exposed between the side wall spacers, and then reaching the exposed substrate for the thermal oxidation of the exposed substrate for forming the field oxide region. In those structures in which the field oxide is buried in the substrate as shown in FIG. 12, it may be feasible to use thicker field oxide regions and thereby to reduce the need for the heavily doped surface layer under the field oxide.

REFERENCES:
patent: 4039359 (1977-08-01), Nakamoto
patent: 4272308 (1981-06-01), Varshney
patent: 4277884 (1981-07-01), Hsu
patent: 4758530 (1988-07-01), Schubert
patent: 4903107 (1990-02-01), Wei

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