Pad over active circuit system and method with meshed...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S758000, C257S773000, C257S776000

Reexamination Certificate

active

07453158

ABSTRACT:
An integrated circuit and method of fabricating the same are provided. Included are an active circuit, and a metal layer disposed, at least partially, above the active circuit. Further provided is a bond pad disposed, at least partially, above the metal layer. To prevent damage incurred during a bonding process, the aforementioned metal layer is meshed.

REFERENCES:
patent: 4636832 (1987-01-01), Abe et al.
patent: 4723197 (1988-02-01), Takiar et al.
patent: 4984061 (1991-01-01), Matsumoto
patent: 5027188 (1991-06-01), Owada et al.
patent: 5751065 (1998-05-01), Chittipeddi et al.
patent: 5773899 (1998-06-01), Zambrano
patent: 5965903 (1999-10-01), Chittipeddi et al.
patent: 5986343 (1999-11-01), Chittipeddi et al.
patent: 6016000 (2000-01-01), Moslehi
patent: 6037668 (2000-03-01), Cave et al.
patent: 6087732 (2000-07-01), Chittipeddi et al.
patent: 6100589 (2000-08-01), Tanaka
patent: 6144100 (2000-11-01), Shen et al.
patent: 6232662 (2001-05-01), Saran
patent: 6297562 (2001-10-01), Tilly
patent: 6313537 (2001-11-01), Lee et al.
patent: 6329712 (2001-12-01), Akram et al.
patent: 6358831 (2002-03-01), Liu et al.
patent: 6365970 (2002-04-01), Tsai et al.
patent: 6384486 (2002-05-01), Zuniga et al.
patent: 6400026 (2002-06-01), Andou et al.
patent: 6417087 (2002-07-01), Chittipeddi et al.
patent: 6448641 (2002-09-01), Ker et al.
patent: 6486051 (2002-11-01), Sabin et al.
patent: 6489228 (2002-12-01), Vigna et al.
patent: 6489688 (2002-12-01), Baumann et al.
patent: 6538326 (2003-03-01), Shimizu et al.
patent: 6552438 (2003-04-01), Lee et al.
patent: 6707156 (2004-03-01), Suzuki et al.
Saran, Mukul et al., “Elimination of Bond-pad Damage Through Structural Reinforcement of Intermetal Dielectrics”, 1998, IEEE 36th Annual International Reliability Physics Symposium, Reno, Nevada.
Horng, Tzyy-Sheng, “A Rigorous Study of Wire-Bonding and Via-Hole Effects on GaAs Field Effect Transistors”, IEEE MTT-S Digest, 1995, pp. 785-788.
Chou, Kuo-Yu et al., “Active Circuits Under Wire Bonding I/O Pads in 0.13 μm Eight-Level Cu Metal, FSG Low-K Inter-Metal Dielectric CMOS Technology +”, Oct. 2001, IEEE.
Efland, T., et al., “LeadFrameOnChip offers Integrated Power Bus and Bond over Active Circuit”, 2001, International Symposium on Power Semiconductor Devices & ICs, Osaka.
Heinen, Gail et al., “Wire Bonds Over Active Circuits”, 1994 IEEE.
The Translation of The Antecedent Notification Of Rejection Reasons From Taiwanese Application No. 93114432.
Office Action Summary from U.S. Appl. No. 10/633,021 which was mailed on Oct. 6, 2005.
Advisory Action from U.S. Appl. No. 10/633,021 which was mailed on Aug. 10, 2005.
Office Action Summary from U.S. Appl. No. 10/633,021 which was mailed on Apr. 18, 2005.
Office Action Summary from U.S. Appl. No. 10/633,021 which was mailed on Nov. 17, 2004.
Office Action Summary from U.S. Appl. No. 10/633,021 which was mailed on Aug. 6, 2004.
Office Action Summary from U.S. Appl. No. 10/633,021 which was mailed on Mar. 20, 2006.
Office Action Summary from U.S. Appl. No. 11/067,551 which was mailed on Mar. 17, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Pad over active circuit system and method with meshed... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pad over active circuit system and method with meshed..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pad over active circuit system and method with meshed... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4021915

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.