Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2003-07-31
2009-02-24
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S758000, C257S773000, C257S776000
Reexamination Certificate
active
07495343
ABSTRACT:
An integrated circuit and method of fabricating the same are provided. Included are an active circuit, and a metal layer disposed, at least partially, above the active circuit. Further provided is a bond pad disposed, at least partially, above the metal layer. To prevent damage incurred during a bonding process, the aforementioned metal layer may define a frame with an outer periphery and an inner periphery.
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Greco Joseph David
Marks Howard Lee
Singh Inderjit
NVIDIA Corporation
Vu Hung
Zilka-Kotab, PC
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