Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-21
2006-11-21
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S106000, C228S179100, C228S904000, C257S784000
Reexamination Certificate
active
07138328
ABSTRACT:
A packaged IC including insulated wire for electrically connecting conductive structures of the packaged IC. In some embodiments, the packaged IC includes an IC die attached to a package substrate, where bond pads of the IC die are electrically connected to bond fingers of the substrate with insulated wire. The insulated wire has a conductive core and an insulator coating. In some examples, the insulator coating includes an inorganic covalently-bonded substance that is not an oxide of the electrically conductive core such as, e.g., silicon nitride or silicon oxide. In one example, the insulator coating is applied to a conductive core by a chemical vapor deposition (CVD) process such as a plasma enhanced chemical vapor deposition (PECVD).
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Downey Susan H.
Harper Peter R.
Dolezal David G.
Freescale Semiconductor Inc.
Jr. Carl Whitehead
Mitchell James M.
Singh Ranjeev
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