P-type layer for a III-nitride light emitting device

Details P-type layer for a III-nitride light emitting device P-type layer for a III-nitride light emitting device

2011-03-15

2011-03-15

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S022000, C438S046000, C257S103000

Reexamination Certificate

active

07906357

ABSTRACT:
A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.

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