4. Semiconductor device manufacturing: process
  5. Making device or circuit emissive of nonelectrical signal
  6. Compound semiconductor

Anneli Munkholm

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III-Nitride light emitting devices with low driving voltage

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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P-type layer for a III-nitride light emitting device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate

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Strain-controlled III-nitride light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2289808

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