Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Patent
1998-10-08
2000-08-29
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
257458, H01L 31075, H01L 31105, H01L 31117
Patent
active
061113050
ABSTRACT:
A semiconductor photodetector includes a SOI substrate; a p-i-n photodiode provided on the SOI substrate, the p-i-n photodiode having an i-type semiconductor region; an insulator film provided on the i-type semiconductor region; and a depleting electrode provided on the insulator film. The semiconductor photodetector exhibits its function well with or without a power source for applying a voltage to the depleting electrode for depleting it. When the power source for depletion is used, the function of the device is realized at a voltage for depletion applied from the power source for depletion lower than a biasing voltage applied from a biasing power source.
REFERENCES:
patent: 5519247 (1996-05-01), Arbus et al.
patent: 5538564 (1996-07-01), Kaschmitter
"p-i-n Photodiodes Made in Laser-Recrystallized Silicon-on-Insulator", IEEE Transactions on Electron Devices, vol. ED-33, No. 2, Feb. 1986, pp. 203-205, Jean-Pierre Colinge.
"A VLSI-Compatible High-Speed Silicon Photodetector for Optical Data Link Applications", IEEE Transactions on Electron Devices, vol. 43, No. 7, Jul. 1996, pp. 1054-1060, Ghioni et al.
"TA 6.1:A3.3-V Monolithic Photodetector/CMOS Preamplifier for 531 Mb/s Optical Data Link Applications", ISSCC93/Session 6/Broadband Data Communications/Paper TA 6.1, 1993 IEEE International Solid-State Circuits Conference, Peter J-W Lim et al., pp. 96-97.
Otomo Yusuke
Yoshida Takeshi
Clark Jhihan B
Hardy David
Nippon Telegraph and Telephone Corporation
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