Patent
1990-03-27
1992-08-18
James, Andrew J.
357 16, 357 35, 357 30, H01L 2972, H01L 29161, H01L 29205, H01L 29225
Patent
active
051404001
ABSTRACT:
This invention relates to a semiconductor device having a collector region of first conductivity type, a base region of second conductivity type, and an emitter region of first conductivity. The base region is divided into a first base area and a second base which surrounds the first base area forming a hereto-junction. The band gap of said second base area is greater than that of the first base area thereby preventing undesired diffusion current.
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Canon Kabushiki Kaisha
James Andrew J.
Meier Stephen D.
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