Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257S627000, C257SE29004, C257SE29106
Reexamination Certificate
active
07928518
ABSTRACT:
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
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Akahori Hiroshi
Nii Keiichi
Ohmi Tadahiro
Teramoto Akinobu
Watanabe Takanori
Ohmi Tadahiro
Schwegman Lundberg & Woessner, P.A.
Warren Matthew E
Yazaki -Corporation
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