Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-21
2011-12-06
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21430, C257SE21634, C257SE21640
Reexamination Certificate
active
08072031
ABSTRACT:
A p-channel MOS transistor includes a gate electrode formed on a silicon substrate via a gate insulating film, a channel region formed below the gate electrode within the silicon substrate, and a p-type source region and a p-type drain region formed at opposite sides of the channel region within the silicon substrate. In the p-channel MOS transistor, first and second sidewall insulating films are arranged on opposing sidewall faces of the gate electrode. First and second p-type epitaxial regions are respectively formed at outer sides of the first and second sidewall insulating films on the silicon substrate, and the first and second p-type epitaxial regions are arranged to be higher than the gate electrode. A stress film that stores tensile stress and covers the gate electrode via the first and second sidewall insulating films is continuously arranged over the first and second p-type epitaxial regions.
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Fujitsu Semiconductor Limited
Movva Amar
Smith Bradley K
Westerman Hattori Daniels & Adrian LLP
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