Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-02-04

2011-11-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Insulative housing or support

C438S107000, C438S123000, C438S124000, C438S508000

Reexamination Certificate

active

08048722

ABSTRACT:
Performing electrolysis plating to a wiring is made possible, aiming at the increasing of pin count of a semiconductor device. Package substrate3by which ring shape common wiring3pfor electric supply was formed in the inner area of bonding lead3jin device region3vof main surface3ais used. Since a plurality of first plating lines3rand fourth plating lines3ufor electric supply connected to common wiring3pcan be arranged by this, the feeder for electrolysis plating can be arranged to all the land parts on the back. Hereby, it becomes possible to perform electrolysis plating to the wiring of main surface3aof package substrate3, and the back surface. Even if the land part of plural lines is formed covering the perimeter of the back surface, electrolysis plating can be performed to the all land parts. As a result, electrolysis plating can be performed to a wiring, aiming at the increasing of pin count of a semiconductor device.

REFERENCES:
patent: 7408252 (2008-08-01), Shimanuki
patent: 7531441 (2009-05-01), Kado et al.
patent: 2004/0026767 (2004-02-01), Sato et al.
patent: 2006/0017151 (2006-01-01), Yoon et al.
patent: 2002-050715 (2002-02-01), None
patent: 2005-079129 (2005-03-01), None

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4272375