Oxynitride bilayer formed using a precursor inducing a high...

Details Oxynitride bilayer formed using a precursor inducing a high... Oxynitride bilayer formed using a precursor inducing a high...

2008-01-08

2011-11-29

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C257SE21626

Reexamination Certificate

active

08067284

ABSTRACT:
A semiconductor device including a bilayer charge storing layer and methods of forming the same are provided. Generally, the method includes: (i) forming a first layer of the bilayer charge storing layer; and (ii) forming a second layer formed on a surface of the first layer, the second layer including an oxynitride charge trapping layer. Preferably, the first layer includes a substantially trap free oxynitride layer. More preferably, the oxynitride charge trapping layer includes a significantly higher stoichiometric composition of silicon than that of the first layer. In certain embodiments, the oxynitride charge trapping layer has a concentration of carbon selected to increase the number of traps therein. Other embodiments are also disclosed.

REFERENCES:
patent: 4490900 (1985-01-01), Chiu
patent: 5464783 (1995-11-01), Kim et al.
patent: 5972765 (1999-10-01), Clark et al.
patent: 6020606 (2000-02-01), Liao
patent: 6023093 (2000-02-01), Gregor et al.
patent: 6114734 (2000-09-01), Eklund
patent: 6140187 (2000-10-01), DeBusk et al.
patent: 6147014 (2000-11-01), Lyding et al.
patent: 6297173 (2001-10-01), Tobin et al.
patent: 6348380 (2002-02-01), Weimer et al.
patent: 6406960 (2002-06-01), Hopper et al.
patent: 6445030 (2002-09-01), Wu et al.
patent: 6661065 (2003-12-01), Kunikiyo
patent: 6677213 (2004-01-01), Ramkumar et al.
patent: 6709928 (2004-03-01), Jenne et al.
patent: 7018868 (2006-03-01), Yang et al.
patent: 7042054 (2006-05-01), Ramkumar et al.
patent: 7482236 (2009-01-01), Lee et al.
patent: 2009/0179253 (2009-07-01), Levy et al.
Ohring, M., Materials Science of Thin Films, 2nd ed. Academic, 2002, pp. 336-337; 4 pages.
USPTO Advisory Action for U.S. Appl. No. 11/811,958 dated Jun. 2, 2011; 5 pages.
USPTO Final Rejection for U.S. Appl. No. 11/811,958 dated Mar. 15, 2011; 13 pages.
USPTO Notice of Allowance for U.S. Appl. No. 09/920,378 dated Nov. 10, 2003; 5 pages.
USPTO Advisory Action for U.S. Appl. No. 09/920,378 dated Sep. 5, 2003; 3 pages.
USPTO Advisory Action for U.S. Appl. No. 09/920,378 dated Jun. 25, 2003; 3 pages.
USPTO Final Rejection for U.S. Appl. No. 09/920,378 dated Mar. 28, 2003; 6 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 09/920,378 dated Oct. 21, 2002; 10 pages.
USPTO Restriction Requirement for U.S. Appl. No. 09/920,378 dated Jul. 22, 2002; 4 pages.
USPTO Notice of Allowance for U.S. Appl. No. 10/740,205 dated Jun. 15, 2005; 6 pages.
USPTO Final Rejection for U.S. Appl. No. 10/740,205 dated Mar. 22, 2005; 8 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 10/740,205 dated Jun. 29, 2004; 5 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 11/811,958 dated Oct. 7, 2010; 12 pages.
USPTO Advisory Action for U.S. Appl. No. 11/811,958 dated Apr. 20, 2010; 6 pages.
USPTO Advisory Action for U.S. Appl. No. 11/811,958 dated Mar. 16, 2010; 4 pages.
USPTO Final Rejection for U.S. Appl. No. 11/811,958 dated Jan. 6, 2010; 17 pages.
USPTO Non-Final Rejection for U.S. Appl. No. 11/811,958 dated May 13, 2009; 14 pages.

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