Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1994-05-06
1995-12-12
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 13, 117916, C30B 1520
Patent
active
054740207
ABSTRACT:
A method for controlling oxygen precipitation (106) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique which includes the steps of forming a cylindrical portion (22) of the silicon crystal (12) from a reservoir of molten silicon (24) according to the Czochralski silicon crystal growing technique. The method includes the steps of terminating the Czochralski silicon crystal growing technique by forming a first tapered portion (101) in silicon crystal (12) at a predetermined rate. A second tapered portion (102) includes a cascaded middle portion (108) that connects to the first tapered portion (101) and that concentrates oxygen precipitation (106) within cascaded middle portion (108) and away from the cylindrical portion (22) of silicon crystal (12). At least a third tapered portion (104) is formed for separating silicon crystal (12) from molten silicon (24).
REFERENCES:
patent: 4040895 (1977-08-01), Patrick et al.
patent: 4436577 (1984-03-01), Frederick et al.
patent: 4511428 (1985-04-01), Ghosh et al.
Bell Weldon J.
Grimes H. Michael
Brady III Wade James
Breneman R. Bruce
Donaldson Richard L.
Garrett Felisa
Swayze, Jr. W. Daniel
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